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The NXH25C120L2C2SG is a silicon IGBT module from onsemi, configured as a three-phase inverter with braking circuit. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 25 A at 25°C. The saturation voltage is 1.7 V, with a gate-emitter leakage current of 400 nA. Operating temperature ranges from -40°C to +150°C. The component utilizes a TMPIM package and is classified under IGBT Silicon Modules.
Verify component status before procurement as the lifecycle status indicates End-of-Life or Not Recommended for New Designs. Confirm availability through authorized distributors, noting that some regions may have restricted sales. Ensure design compatibility with the specified 1.2 kV rating and 25 A current requirements to avoid obsolescence risks.
Select this module for applications requiring a combined inverter and braking topology within a single package. The 1.2 kV voltage rating suits medium-voltage industrial systems. Consider the 25 A current capacity and 1.7 V saturation voltage for efficiency calculations. Verify thermal management capabilities align with the -40°C to +150°C operating range.
This part belongs to the NXH25C120L2C2 series of IGBT modules by onsemi. It represents a silicon-based solution designed for high-power density applications. The module integrates multiple semiconductor devices into a single unit, simplifying assembly compared to discrete components while maintaining high reliability standards for industrial environments.
Public confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, alternative sourcing should focus on existing stock or verify if newer revisions within the same family offer direct pin-compatible replacements without functional changes.