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The NXH25T120L2Q1PG is a silicon IGBT module manufactured by onsemi, designed for three-phase inverter configurations. It features a T-Type NPC topology with press-fit pins and utilizes TIM technology. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 20 A at 25°C. Typical saturation voltage is 1.9 V, with a power dissipation rating of 81 W. Operating temperatures range from -40°C to +150°C.
Verify the specific ordering suffix PG against official datasheets to confirm package type and terminal configuration. Ensure compatibility with existing PCB layouts or busbar designs requiring press-fit termination. Confirm RoHS compliance status through manufacturer documentation before integration into regulated assemblies.
Select this component when a 1.2 kV rating and approximately 20 A continuous current are required for three-phase applications. The T-Type NPC structure offers distinct electrical characteristics compared to standard half-bridge modules. Verify that the system design accommodates the specific thermal management needs associated with the 81 W power dissipation rating.
This part belongs to the NXH25T120L2Q1 series of IGBT modules. It shares the core electrical specifications with variants like NXH25T120L2Q1PTG but differs in packaging and terminal implementation. The Q1 designation indicates the specific generation of the T-Type NPC technology used within this product line.
NXH25T120L2Q1PTG is a related variant within the same series. Verify if the PTG press-fit configuration meets mechanical requirements. Direct substitution requires confirming identical thermal and electrical parameters alongside compatible mounting hardware.