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The NXH300B100H4Q2F2PG is a power module manufactured by onsemi, classified under IGBT Modules. It utilizes EliteSiC technology and features a Q2BOOST configuration. The device supports a collector-emitter maximum voltage of 1 kV. At 25°C, it provides a continuous collector current ranging from 164 A to 170 A. The saturation voltage varies between 1.88 V and 2.0 V depending on specific conditions. Maximum power dissipation is rated at 396 W. The module operates within a temperature range of -40°C to +175°C TJ and is housed in a PIM-50 package.
Verify the exact part number against official onsemi documentation to ensure compatibility with system requirements. Confirm that the EliteSiC series specifications match the design parameters. Check for any recent product change notifications regarding manufacturing updates or material substitutions before finalizing procurement decisions.
Select this component based on its 1 kV blocking capability and high current handling capacity suitable for medium-power applications. Ensure the cooling solution can manage the specified 396 W power dissipation effectively. Verify that the gate drive circuitry aligns with the module's electrical characteristics and switching speeds.
This module belongs to the NXH300 series, which represents onsemi's portfolio of high-performance power modules. The series is designed for demanding industrial and renewable energy applications requiring reliable operation under high stress conditions.
NXH400B100H4Q2F2SG is listed as a related alternative within the same manufacturer's lineup, offering similar packaging and voltage ratings but with different current capabilities.