NXH300B100H4Q2F2S1G

NXH300B100H4Q2F2S1G

$112.73
  • Description:PIM 1500V 250KW Q2BOOST
  • Series:-

SKU:d362ec1bb668 Category: Brand:

  
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Product Detailed Parameters

  • Description:PIM 1500V 250KW Q2BOOST
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Dual, Common Source
  • Vce(on) (Max) @ Vge, Ic:2.25V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:53-PIM/Q2PACK (93x47)
  • Voltage - Collector Emitter Breakdown (Max):1118 V
  • Current - Collector (Ic) (Max):73 A
  • Power - Max:194 W
  • Current - Collector Cutoff (Max):800 µA
  • Input Capacitance (Cies) @ Vce:6.323 nF @ 20 V

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NXH300B100H4Q2F2S1G

Overview

NXH300B100H4Q2F2S1G is a Si/SiC hybrid three-channel flying capacitor boost module from onsemi. It integrates three channels, each containing two 1000 V, 100 A IGBTs and two 1200 V, 30 A SiC diodes. The device utilizes EliteSiC technology with trench field-stop structure for low switching losses. It features a Q2PACK surface-mount package designed for high power density and low inductance layout.

Feature Summary

  • Integrates Si IGBTs and SiC diodes in a single hybrid module
  • Three-channel flying capacitor boost topology
  • Trench field-stop technology for reduced switching losses
  • Low inductance design for improved system stability

Applications

  • Solar inverters
  • Uninterruptible power supply systems
  • High-efficiency DC-DC conversion stages

Procurement Notes

Verify the specific suffix S1G against official datasheets to confirm pinout and marking details. Ensure thermal management solutions match the Q2PACK chassis mount requirements. Confirm RoHS compliance status through manufacturer documentation prior to integration.

Selection Notes

Select this module for applications requiring high power density and efficient boost conversion. The hybrid Si/SiC design offers superior performance compared to pure silicon alternatives. Consider the 1000 V rating and current capabilities when designing the power stage.

Part Context

This component belongs to onsemi's EliteSiC NXH series of hybrid modules. It combines traditional silicon IGBTs with silicon carbide diodes to optimize efficiency and switching speed. The Q2PACK family provides standardized mounting for industrial power electronics.

Replacement Considerations

NXH600B100H4Q2F2S1G is a related higher-power variant within the same hybrid module family. Verify channel count and current ratings before substitution.

NXH300B100H4Q2F2S1GNXH300B100H4Q2F2S1G
$112.73
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