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NXH300B100H4Q2F2S1G is a Si/SiC hybrid three-channel flying capacitor boost module from onsemi. It integrates three channels, each containing two 1000 V, 100 A IGBTs and two 1200 V, 30 A SiC diodes. The device utilizes EliteSiC technology with trench field-stop structure for low switching losses. It features a Q2PACK surface-mount package designed for high power density and low inductance layout.
Verify the specific suffix S1G against official datasheets to confirm pinout and marking details. Ensure thermal management solutions match the Q2PACK chassis mount requirements. Confirm RoHS compliance status through manufacturer documentation prior to integration.
Select this module for applications requiring high power density and efficient boost conversion. The hybrid Si/SiC design offers superior performance compared to pure silicon alternatives. Consider the 1000 V rating and current capabilities when designing the power stage.
This component belongs to onsemi's EliteSiC NXH series of hybrid modules. It combines traditional silicon IGBTs with silicon carbide diodes to optimize efficiency and switching speed. The Q2PACK family provides standardized mounting for industrial power electronics.
NXH600B100H4Q2F2S1G is a related higher-power variant within the same hybrid module family. Verify channel count and current ratings before substitution.