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The NXH350N100H4Q2F2S1G-R is a Si/SiC hybrid power module from onsemi, utilizing EliteSiC technology in a Q2PACK (PIM42) package with solder pins. It integrates trench field-stop IGBTs and anti-parallel diodes for an I-type NPC topology. Key electrical ratings include a collector-emitter voltage of 1000 V, continuous collector currents of 303 A (outer) and 298 A (inner), and peak currents up to 909 A. The module features a neutral point diode rated at 1200 V and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific ordering suffix '-R' against the manufacturer's documentation to confirm it denotes reel packaging or specific shipping variations within the Q2PACK family. Ensure that the solder pin configuration matches the target PCB footprint requirements. Cross-reference the RoHS compliance status directly with the latest datasheet revision to ensure adherence to current environmental standards.
Select this module for applications requiring a 1000 V rating with high current capacity in a compact form factor. The integrated NTC thermistor simplifies thermal management strategies by providing direct junction temperature feedback. Evaluate the thermal resistance values relative to the heatsink interface material thickness to ensure adequate heat dissipation under maximum load conditions.
This component belongs to the NXH350N100H4Q2F2 series, which encompasses variants with press-fit or solder pin terminations. The 'S1G' designation indicates the solder pin version, while the '-R' suffix typically refers to the shipping format. All variants share identical internal semiconductor structures and electrical characteristics defined in the official datasheet.
NXH350N100H4Q2F2S1G
The maximum operating junction temperature is 175°C.
Yes, it includes an integrated NTC thermistor with a nominal resistance of 22 kΩ at 25°C.
The isolation test voltage is 4000 VRMS for a duration of 1 second at 50 Hz.