NXH35C120L2C2SG

NXH35C120L2C2SG

$75.28
  • Description:IGBT MODULE, CIB 1200 V, 35 A IG
  • Series:-

SKU:8c3fcd5fabc8 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE, CIB 1200 V, 35 A IG
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Tube
  • IGBT Type:-
  • Configuration:Three Phase Inverter with Brake
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 35A
  • Input:Three Phase Bridge Rectifier
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:26-PowerDIP Module (1.199", 47.20mm)
  • Supplier Device Package:26-DIP
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):35 A
  • Power - Max:20 mW
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:8.33 nF @ 20 V

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NXH35C120L2C2SG

Overview

The NXH35C120L2C2SG is a silicon IGBT module manufactured by onsemi, designed for three-phase inverter configurations. It features a collector-emitter maximum voltage (VCEO) of 1.2 kV and a continuous collector current of 35 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 400 nA. Operating temperatures range from -40°C to +150°C. The component utilizes standard silicon technology and is supplied in tube packaging.

Feature Summary

  • Designed for three-phase inverter applications
  • Utilizes silicon IGBT technology
  • Rated for high-voltage operation up to 1.2 kV

Applications

  • Three-phase inverter systems
  • Industrial motor drives
  • Power conversion equipment

Procurement Notes

This component is identified as an End-of-Life product. Manufacturers have issued discontinuation notifications indicating that the part will be phased out and production ceased. Verification of final availability through official channels is required before integration into new designs.

Selection Notes

Engineers should evaluate alternative components due to the discontinued status of this specific part number. Selection criteria must account for the 1.2 kV voltage rating and 35 A current capacity while ensuring compatibility with existing thermal management and gate drive requirements for three-phase topologies.

Part Context

The NXH35C120L2C2SG belongs to the NXH35C120L2C2E series of IGBT modules produced by onsemi. This series focuses on providing robust switching performance for medium-power industrial applications requiring reliable three-phase inversion capabilities within specified thermal limits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, engineers must identify equivalent devices based on matching electrical parameters such as voltage, current, and package type.

NXH35C120L2C2SGNXH35C120L2C2SG
$75.28
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