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The NXH35C120L2C2SG is a silicon IGBT module manufactured by onsemi, designed for three-phase inverter configurations. It features a collector-emitter maximum voltage (VCEO) of 1.2 kV and a continuous collector current of 35 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 400 nA. Operating temperatures range from -40°C to +150°C. The component utilizes standard silicon technology and is supplied in tube packaging.
This component is identified as an End-of-Life product. Manufacturers have issued discontinuation notifications indicating that the part will be phased out and production ceased. Verification of final availability through official channels is required before integration into new designs.
Engineers should evaluate alternative components due to the discontinued status of this specific part number. Selection criteria must account for the 1.2 kV voltage rating and 35 A current capacity while ensuring compatibility with existing thermal management and gate drive requirements for three-phase topologies.
The NXH35C120L2C2SG belongs to the NXH35C120L2C2E series of IGBT modules produced by onsemi. This series focuses on providing robust switching performance for medium-power industrial applications requiring reliable three-phase inversion capabilities within specified thermal limits.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, engineers must identify equivalent devices based on matching electrical parameters such as voltage, current, and package type.