NXH450B100H4Q2F2SG

Overview

The NXH450B100H4Q2F2SG is a silicon IGBT module from onsemi, utilizing FSIII technology with mid-speed characteristics and rugged anti-parallel diodes. It features press-fit pins for mounting within the PIM-50 package. The device supports a collector-emitter voltage of 1000V and a continuous collector current of 75A at 25°C. Operating temperatures range from -40°C to +175°C junction temperature. This component is designed for high-density power conversion applications requiring robust performance.

Feature Summary

• FSIII IGBT technology with mid-speed switching characteristics
• Rugged anti-parallel diode configuration
• Press-fit pin mounting style for secure installation

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Procurement Notes

Verify part authenticity through authorized channels. Confirm datasheet revisions and RoHS compliance status prior to integration. Check for end-of-life notifications or product change notices that may affect long-term availability. Ensure thermal interface materials are compatible with the specified operating temperature range.

Selection Notes

Select this module for applications requiring 1000V blocking capability and moderate switching speeds. Evaluate thermal management requirements against the 75A continuous current rating. Consider the press-fit mounting method for assembly line efficiency and mechanical stability in high-vibration environments.

Part Context

This component belongs to onsemi's NXH series of IGBT modules. It shares the PIM-50 package form factor with other variants in the lineup. The FSIII technology platform emphasizes reliability and ruggedness for industrial power electronics.

Replacement Considerations

Direct substitutes include NXH450B100H4Q2F2PG-R. Verify pin compatibility and electrical parameters before substitution.