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The NXH450N65L4Q2F2PG is a power module containing an I-type neutral point clamped three-level inverter. It integrates field stop trench IGBTs and fast recovery diodes (FRDs) to reduce conduction and switching losses. The module features a low inductive layout, solderable pins, and an integrated thermistor for thermal monitoring. Maximum ratings include a collector-emitter voltage of 650 V, continuous collector current of 167 A for outer IGBTs at Tc=80°C, and 280 A for inner IGBTs. Power dissipation reaches 365 W for outer IGBTs and 633 W for inner IGBTs at TJ=175°C. The isolation test voltage is 4000 VRMS.
Verify the specific ordering suffix PG against official documentation to confirm package type and pin configuration. Ensure compatibility with required mounting hardware and thermal interface materials. Confirm RoHS compliance status through manufacturer datasheets before procurement.
Select based on required voltage rating of 650 V and current handling capabilities for outer or inner IGBT legs. Evaluate thermal resistance values for heatsink design. Verify gate drive requirements against threshold voltage and total gate charge specifications.
This component belongs to the NXH450N65L4Q2F2 series from onsemi. It is part of a family of I-type NPC three-level inverter modules designed for high efficiency and reliability in power conversion applications.
NXH450N65L4Q2F2SG is a parameter equivalent alternative within the same series.