SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
NXH50C120L2C2ES1G is a three-phase inverter IGBT module from onsemi, rated at 1200V collector-emitter voltage and 50A continuous collector current. It features a saturated collector-emitter voltage of 1.8V and operates within a temperature range of -40°C to +150°C. The device utilizes silicon technology and is housed in a tube package.
Verify component authenticity through authorized channels. Confirm the End-of-Life status prior to procurement decisions. Ensure storage conditions comply with manufacturer specifications for silicon modules. Validate pin compatibility with existing PCB layouts before integration.
Select this module for applications requiring robust three-phase inversion capabilities. Consider the 1200V rating for medium-voltage industrial environments. Evaluate thermal management requirements given the 150°C maximum junction temperature limit. Assess system space constraints against the 26-DIP package dimensions.
This component belongs to the NXH35C120L2C2E series of IGBT modules. It shares similar architectural characteristics with other devices in the family, offering standardized performance metrics for power switching applications. The specific model provides distinct current handling capabilities compared to adjacent variants.
The manufacturer has scheduled this part for obsolescence. Verify availability of direct substitutes or updated series replacements. Check electrical parameter compatibility if considering alternative manufacturers. Review lifecycle notifications for transition timelines.