NXH50C120L2C2ES1G

NXH50C120L2C2ES1G

$80.01
  • Description:IGBT MOD 1200V 50A 26DIP
  • Series:-

SKU:f59b710b479d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT MOD 1200V 50A 26DIP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Tube,Tube
  • IGBT Type:-
  • Configuration:Three Phase Inverter with Brake
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 50A
  • Input:Three Phase Bridge Rectifier
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:26-PowerDIP Module (1.199", 47.20mm)
  • Supplier Device Package:26-DIP
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:20 mW
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:11.89 nF @ 20 V

Download product information

NXH50C120L2C2ES1G

Overview

NXH50C120L2C2ES1G is a three-phase inverter IGBT module from onsemi, rated at 1200V collector-emitter voltage and 50A continuous collector current. It features a saturated collector-emitter voltage of 1.8V and operates within a temperature range of -40°C to +150°C. The device utilizes silicon technology and is housed in a tube package.

Feature Summary

  • Configured as a three-phase inverter bridge with separate emitter connections for lower legs
  • Designed for high-temperature operation up to 150°C

Applications

  • Three-phase motor drives
  • Industrial inverters
  • Power conversion systems

Procurement Notes

Verify component authenticity through authorized channels. Confirm the End-of-Life status prior to procurement decisions. Ensure storage conditions comply with manufacturer specifications for silicon modules. Validate pin compatibility with existing PCB layouts before integration.

Selection Notes

Select this module for applications requiring robust three-phase inversion capabilities. Consider the 1200V rating for medium-voltage industrial environments. Evaluate thermal management requirements given the 150°C maximum junction temperature limit. Assess system space constraints against the 26-DIP package dimensions.

Part Context

This component belongs to the NXH35C120L2C2E series of IGBT modules. It shares similar architectural characteristics with other devices in the family, offering standardized performance metrics for power switching applications. The specific model provides distinct current handling capabilities compared to adjacent variants.

Replacement Considerations

The manufacturer has scheduled this part for obsolescence. Verify availability of direct substitutes or updated series replacements. Check electrical parameter compatibility if considering alternative manufacturers. Review lifecycle notifications for transition timelines.

NXH50C120L2C2ES1GNXH50C120L2C2ES1G
$80.01
Buy Now