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The NXH50M65L4Q1SG is a silicon IGBT module manufactured by onsemi, belonging to the NXH50M65L4Q1 series. It features a full bridge configuration housed in a Q1PACK package. The device supports a maximum collector-emitter voltage (VCEO) of 650 V and delivers a continuous collector current of 48 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.56 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 72 W. The module operates within a temperature range of -40°C to +150°C.
Verify the specific suffix 'SG' against the official datasheet to confirm pinout and terminal compatibility. Confirm RoHS compliance status through the manufacturer's environmental documentation before integration. Ensure thermal management solutions align with the 72 W power dissipation rating and the specified operating temperature limits to maintain reliability.
Select this component when a full bridge topology is required within a single module footprint. The 650 V rating suits medium-voltage AC/DC conversion systems. Compare the 48 A continuous current capability against peak load requirements. Evaluate the Q1PACK form factor against available board space constraints compared to alternative packages like Q2PACK or standard modules.
This part belongs to the NXH50M65L4Q1 series from onsemi, which utilizes silicon trench field-stop technology. The series is engineered for high-efficiency power conversion. The Q1PACK variant offers a standardized mechanical interface for automated assembly processes in consumer and industrial electronics manufacturing lines.
Publicly confirmed direct substitutes are not available in the provided source material. Verify pin-to-pin compatibility with other Q1PACK full bridge modules from different manufacturers if cross-sourcing is necessary.