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The NXH600B100H4Q2F2PG is a Si/SiC hybrid three-channel symmetric boost module from onsemi's EliteSiC series. It integrates two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes per channel. The device utilizes trench field stop technology for efficiency and features a Q2BOOST package with press-fit pins (Case 180HF). Key electrical parameters include a collector-emitter saturation voltage of 1.69 V at 25°C and 200 A, and a gate-emitter threshold voltage ranging from 3.8 V to 6.6 V. An integrated NTC thermistor provides thermal monitoring.
Verify the ordering suffix 'PG' confirms the PIM44 package with press-fit pins rather than solder pins. Confirm RoHS compliance and lead times directly with authorized distributors or the manufacturer. Ensure the specific assembly site code matches project requirements before finalizing orders.
Select this module for high-efficiency boost applications requiring mixed Si/SiC performance. Verify that the 1000 V rating and 200 A current capacity align with the circuit design. Consider the thermal resistance values for heatsink selection and ensure the operating temperature range fits the application environment.
This component belongs to the NXH600B100H4Q2F2 family, which includes variants with different termination styles. The 'PG' suffix specifically denotes the press-fit pin configuration, distinguishing it from the 'SG' variant which uses solder pins. Both share identical internal semiconductor structures and electrical characteristics.
NXH600B100H4Q2F2SG serves as a functional equivalent with identical electrical specifications but utilizes solder pins instead of press-fit connections. Verify mechanical compatibility with the PCB mounting method when substituting between these variants.