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The NXH600N105H7F5S1HG is a silicon IGBT module from onsemi, designed for high-power energy storage systems. It features a 1050 V collector-emitter voltage and a 600 A rated current. The device utilizes an I-type Neutral Point Clamped (NPC) topology within the F5BP package. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.3 V and a power dissipation rating of 1.08 kW. It operates within a temperature range of -40°C to +150°C and employs press-fit mounting technology.
Verify the exact part number against official documentation, as similar suffixes like L7 or H7 indicate distinct product variants. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Ensure that the specific ordering code matches the required technical specifications for your design.
Select this module for applications requiring 1500V DC system support and high power density. The F5BP package offers improved thermal characteristics over previous generations. Consider the 1050V rating when designing for grid-tied energy storage architectures.
This component belongs to onsemi's NXH series of IGBT modules, specifically engineered for renewable energy and industrial drives. It represents a generation of products combining Si and SiC technologies to optimize design flexibility for utility-grade applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing PCB footprints and thermal management solutions if considering alternative suppliers.