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The NXH600N105L7F5S2HG is a silicon IGBT module from onsemi, configured as a quad unit within the F5BP-INPC package. It utilizes FS7 field-stop trench IGBT technology and features an HPS DBC substrate with silver sintering for enhanced thermal performance. The module supports a collector-emitter saturation voltage of 1.6 V at 25°C and handles a continuous collector current of 429 A. It operates within a temperature range of -40°C to +175°C, with a maximum power dissipation of 1.08 kW and a gate-emitter leakage current of 1 uA. The device is designed for press-fit mounting and integrates high-power switching capabilities suitable for demanding energy conversion applications.
Verify the specific suffix designation against official datasheets to ensure correct pinout and internal component configuration. Confirm RoHS compliance status through manufacturer documentation prior to integration. Validate thermal interface material requirements for the press-fit installation method to maintain optimal heat transfer performance during operation.
Select this module for applications requiring high current handling in a compact form factor. Ensure the driving circuitry supports the specified gate-emitter voltage limits. Evaluate system cooling solutions to manage the 1.08 kW power dissipation effectively within the stated operating temperature range.
This component belongs to onsemi's EliteSiC and hybrid power integrated module portfolio, specifically targeting renewable energy infrastructure. It complements other F5BP series modules by offering a balanced solution for mid-to-high power inversion stages. The part number indicates specific internal topology and packaging variations distinct from similar NXH series devices.
Direct substitutes are not explicitly listed in public documentation. Verify compatibility with existing PCB footprints and thermal management designs when considering alternative quad IGBT modules from the same or competing manufacturers.