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The NXH600N65L4Q2F2SG is a power module containing an I-type neutral point clamped three-level inverter. It integrates Field Stop 4 trench IGBTs and FRDs to reduce conduction and switching losses. The outer IGBTs (T1, T4) have a collector-emitter voltage of 650 V and a continuous collector current of 483 A at Tc = 80 °C. The inner IGBTs (T2, T3) feature a continuous collector current of 314 A under the same conditions. The module operates within a junction temperature range of -40 °C to 175 °C and utilizes a PIM41 package with solderable pins.
Verify the specific ordering suffix 'SG' corresponds to the Q2PACK package with Pb-Free and Halide-Free solderable pins. Confirm the shipping quantity matches the blister tray configuration of 12 units per tray as defined in the official onsemi documentation. Ensure compliance with RoHS standards during procurement.
Select this component for applications requiring high-efficiency three-level inversion. Verify that the system's thermal management can maintain the case temperature at or below 80 °C to support the rated continuous collector currents. Ensure gate drive voltages remain within the specified ±15 V operational limits to prevent device damage.
This part belongs to the NXH600N65L4Q2F2 series from onsemi. The 'SG' suffix specifically denotes the version equipped with solderable pins housed in a Q2PACK (PIM41) format. This distinguishes it from the 'PG' variant which utilizes press-fit pins within the same physical footprint.
NXH600N65L4Q2F2PG is a parameter-equivalent alternative offering identical electrical characteristics but utilizing press-fit pins instead of solderable pins.