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The NXH800A100L4Q2F2S2G is a three-level ANPC Q2Pack module from onsemi, utilizing silicon IGBT technology. It features solder pins and a negative configuration (Case 180BM). The outer IGBTs (T1a, T1b, T4a, T4b) have a VCES of 1000 V and a continuous collector current of 309 A at TC = 80°C. The inner IGBTs (T2, T3) support 413 A, while neutral point IGBTs (T5, T6) support 224 A. Maximum power dissipation reaches 714 W for outer devices at TJ = 175°C. Operating junction temperature spans -40°C to +175°C.
Verify the specific ordering suffix 'S2G' corresponds to the Q2PACK negative solder pin configuration (Case 180BM) as documented in the official datasheet. Confirm that the component is lead-free and halide-free before integration. Ensure compatibility with the required mounting style and verify the assembly site code if traceability is critical for the application.
Select this module for applications requiring a three-level ANPC topology with high current density. Consider the thermal resistance values and maximum operating junction temperature when designing the heatsink interface. Verify that the gate drive voltage ranges and switching characteristics align with the control circuit requirements to ensure optimal performance and reliability under load conditions.
This part belongs to the NXH800A100L4Q2F2 series of three-level ANPC modules. It shares core electrical specifications with variants like NXH800A100L4Q2F2S1G, differing primarily in the terminal configuration. The S2G suffix specifically denotes the negative solder pin version, distinguishing it from press-fit or positive pin alternatives within the same product family.
NXH800A100L4Q2F2S1G
The isolation test voltage is 4000 VRMS for 1 second at 50 Hz.
The comparative tracking index is greater than 600.
The nominal resistance is 22 kOhm at 25°C and 1504 Ohm at 100°C.