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The NXH80T120L2Q0PG is a silicon IGBT power module from onsemi, designed for three-phase inverter applications. It features a T-type Neutral Point Clamped (NPC) topology within the Q0PACK package. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V and a typical gate-emitter threshold voltage of 4.5 V. The module utilizes press-fit pins for mounting and operates within a junction temperature range of -40°C to +175°C.
Verify the specific suffix against official datasheets to confirm terminal type and thermal interface material specifications. Ensure compatibility with mating PCB or busbar designs requiring press-fit installation. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated equipment assemblies.
Select this component for high-efficiency three-phase conversion where low conduction loss is critical. Evaluate thermal management requirements based on the specified power dissipation and junction temperature limits. Compare against alternative topologies if space constraints dictate a different package size or pin configuration.
This part belongs to onsemi's NXH series of high-power IGBT modules. It shares the Q0PACK form factor with other variants in the lineup, offering standardized mounting dimensions. The series targets demanding industrial and renewable energy applications requiring reliable high-voltage switching capabilities.
Direct substitutes may include NXH80T120L2Q0S2TG or NXH80T120L2Q0P2G, provided the terminal style matches the design intent. Verify pinout compatibility and thermal characteristics before swapping components in existing layouts.