NXH80T120L2Q0PG

NXH80T120L2Q0PG

  • Description:PIM IGBT CLAMP 1200V Q0PACK180AA
  • Series:-

SKU:8c17c3ef1e29 Category: Brand:

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Product Detailed Parameters

  • Description:PIM IGBT CLAMP 1200V Q0PACK180AA
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:T-Type
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 80A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Press Fit
  • Package / Case:Module
  • Supplier Device Package:Q0Pack180AA
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):65 A
  • Power - Max:146 W
  • Current - Collector Cutoff (Max):100 µA
  • Input Capacitance (Cies) @ Vce:1.99 nF @ 20 V

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NXH80T120L2Q0PG

Overview

The NXH80T120L2Q0PG is a silicon IGBT power module from onsemi, designed for three-phase inverter applications. It features a T-type Neutral Point Clamped (NPC) topology within the Q0PACK package. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V and a typical gate-emitter threshold voltage of 4.5 V. The module utilizes press-fit pins for mounting and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

  • Utilizes T-type NPC topology for reduced switching losses and improved efficiency in three-phase inverters.
  • Features press-fit termination technology for robust mechanical connection and simplified assembly.
  • Incorporates trench field-stop IGBT technology to optimize conduction and switching performance.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar string inverters

Procurement Notes

Verify the specific suffix against official datasheets to confirm terminal type and thermal interface material specifications. Ensure compatibility with mating PCB or busbar designs requiring press-fit installation. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated equipment assemblies.

Selection Notes

Select this component for high-efficiency three-phase conversion where low conduction loss is critical. Evaluate thermal management requirements based on the specified power dissipation and junction temperature limits. Compare against alternative topologies if space constraints dictate a different package size or pin configuration.

Part Context

This part belongs to onsemi's NXH series of high-power IGBT modules. It shares the Q0PACK form factor with other variants in the lineup, offering standardized mounting dimensions. The series targets demanding industrial and renewable energy applications requiring reliable high-voltage switching capabilities.

Replacement Considerations

Direct substitutes may include NXH80T120L2Q0S2TG or NXH80T120L2Q0P2G, provided the terminal style matches the design intent. Verify pinout compatibility and thermal characteristics before swapping components in existing layouts.

NXH80T120L2Q0PGNXH80T120L2Q0PG

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