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Product Detailed Parameters
- Description：PIM 1200V 80A TNPC STAND
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：2.85V @ 15V, 80A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：20-PIM/Q0PACK (55x32.5)
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：67 A
- Power - Max：158 W
- Current - Collector Cutoff (Max)：300 µA
- Input Capacitance (Cies) @ Vce：19400 pF @ 25 V
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Overview
The NXH80T120L2Q0S2G is a silicon IGBT module manufactured by onsemi, classified under the Half Bridge configuration. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and supports a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.05 V and a gate-emitter leakage current of 300 nA. Power dissipation is rated at 158 W, with an operating temperature range spanning from -40°C to +150°C. The component utilizes standard pinout technology and is supplied in Tray packaging.
Feature Summary
- Half bridge topology for power conversion applications
- Standard pinout configuration for compatibility
- Silicon-based trench field-stop technology
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before integration. Confirm that the standard pinout matches the target PCB footprint requirements. Ensure thermal management solutions align with the 158 W power dissipation rating and the specified junction temperature limits to maintain operational reliability.
Selection Notes
Select this module when a 1.2 kV half-bridge IGBT solution with 80 A continuous current capability is required. Consider the 2.05 V saturation voltage for conduction loss calculations. Verify that the -40°C to +150°C operating range meets the environmental constraints of the intended application. Compare against other Q0PACK variants if different thermal or electrical characteristics are needed.
Part Context
This part belongs to onsemi's IGBT Silicon Modules portfolio, specifically within the NXH series. It represents a standard pinout variant designed for general-purpose power electronics. The module integrates high-voltage silicon IGBTs optimized for efficiency and reliability in medium-power industrial applications.
Replacement Considerations
NXH80T120L2Q0S2TG is a tray-packaged alternative within the same series. NXH80T120L3Q0S3G offers a Generation 3 Q0PACK design with solder pins and different thermal ratings.
