ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1200V 65A 146W PIM20
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：-
- Configuration：T-Type
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 80A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：Module
- Supplier Device Package：20-PIM/Q0PACK (55x32.5)
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：65 A
- Power - Max：146 W
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：1.99 nF @ 20 V
Download product information
Overview
The NXH80T120L2Q0SG is a silicon IGBT module manufactured by onsemi, designed for high-power applications. It features a half-bridge configuration within the PIM Q0PACK housing. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 2.05 V and a power dissipation rating of 158 W. The module operates reliably across a junction temperature range from -40°C to +150°C.
Feature Summary
- Utilizes trench field-stop technology for optimized switching performance and low conduction losses.
- Incorporates a TNPC topology suitable for three-level inverter architectures.
- Features standard pinout compatibility for simplified integration into existing designs.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via official datasheets. Ensure storage conditions adhere to moisture sensitivity guidelines prior to assembly. Validate package integrity upon receipt to prevent thermal interface damage during installation.
Selection Notes
Select this module based on its 1200V blocking capability and 80A current rating for medium-power systems. Consider the 158W power dissipation limit when designing heatsinking solutions. Verify that the operating junction temperature range meets the specific environmental requirements of the target application.
Part Context
This component belongs to the NXH80T120L2 series of IGBT modules. It shares the Q0PACK form factor with other variants in the family, ensuring mechanical interchangeability where electrical specifications align. The series targets efficient power conversion in industrial and renewable energy sectors.
Replacement Considerations
Direct substitutes include NXH80T120L2Q0S2G and NXH80T120L2Q0P2G. Verify pinout compatibility and thermal characteristics before substitution. Consult official cross-reference guides for detailed parameter comparisons.
