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The NXH80T120L3Q0S3TG is a T-type neutral point clamped (NPC) three-level inverter power module from onsemi. It integrates field stop trench IGBTs and fast recovery diodes within a Q0PACK package measuring 55x32.5 mm. The half-bridge IGBT supports a collector-emitter voltage of 1200 V, a continuous current of 75 A at 80°C case temperature, and a maximum power dissipation of 188 W. The neutral point IGBT handles up to 650 V and 50 A with 82 W dissipation. The module includes an NTC thermistor for thermal monitoring and utilizes pre-applied thermal interface material.
Verify the specific suffix 'TG' indicates the inclusion of pre-applied thermal interface material, distinguishing it from the standard solder pin variant without TIM. Confirm the component matches the Q0PACK Case 180AB outline and ensure compatibility with the required mounting footprint. Cross-reference the ordering information to validate the manufacturer's part number against official documentation before finalizing procurement.
Select this module for designs requiring a T-type NPC three-level inverter topology. Ensure the cooling system can maintain the case temperature at or below 80°C to support the rated 75 A continuous collector current. Verify that the gate drive circuitry accommodates the specified total gate charge and switching characteristics for optimal performance.
This component belongs to the NXH80T120L3Q0 series of silicon IGBT modules. It shares the same core electrical specifications as the NXH80T120L3Q0S3G but differs in packaging configuration by including pre-applied thermal interface material. It is distinct from press-fit variants like the NXH80T120L3Q0P3G.
NXH80T120L3Q0S3G
The 'TG' suffix indicates that the module comes with pre-applied thermal interface material (TIM).
It contains a T-type neutral point clamped (NPC) three-level inverter stage.
Yes, it includes an integrated NTC thermistor for thermal monitoring.