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The NXPS20H100C,127 is a dual common cathode power Schottky diode manufactured by WeEn Semiconductors. It features a repetitive peak reverse voltage of 100 V and an average forward current rating of 10 A per diode. The device supports a maximum junction temperature of 175 °C. Forward voltage is specified at 0.77 V when conducting 10 A at 25 °C. Reverse leakage current measures 4.5 µA at 100 V and 25 °C. The component utilizes a TO-220AB plastic package with a mounting base.
Verify the specific ordering suffix against official documentation to confirm package variant and manufacturing lot details. Confirm that the component meets all required electrical specifications for the intended operating environment before integration into final designs.
Select this component for applications requiring high frequency operation with minimal switching losses. Ensure the thermal management system maintains the mounting base temperature within the specified limits to support the rated average forward current without exceeding the maximum junction temperature threshold.
This part belongs to the NXPS20 series of dual power Schottky diodes from WeEn Semiconductors. The series is engineered for switched mode power supplies where efficiency and thermal stability are critical. The dual common cathode configuration allows for center-tapped transformer applications or synchronous rectification setups.
NXPS20H100CX,127
The maximum non-repetitive peak forward current is 250 A for a sine-wave pulse with a duration of 10 ms.
The forward voltage decreases as temperature increases; it drops from a typical 0.77 V at 25 °C to approximately 0.64 V at 125 °C under a 10 A load.
The thermal resistance from junction to ambient in free air is typically 60 K/W.