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NXV65UPR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is NXV65UP/SOT23/TO-236AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NXV65UPR
- Description：NXV65UP/SOT23/TO-236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：70mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：458 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：340mW (Ta), 2.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for NXV65UPR
Single FETs, MOSFETs Overview
The NXV65UPR is a P-Channel MOSFET manufactured by Nexperia, designed for surface mount applications in the TO-236AB package. It features a continuous drain current of 2.1A at Ta and a drain-source on-state resistance of 0.055 ohm. The device supports a gate-source voltage of ±8V with a gate charge of 5.8nC. Power dissipation ratings are 340mW at Ta and 2.1W at Tc. The component utilizes trench technology for unipolar operation.
Single FETs, MOSFETs Feature Summary
- Utilizes trench technology for efficient unipolar P-channel operation
- Designed for surface mount mounting in compact packages
- Supports standard logic-level gate drive requirements
Single FETs, MOSFETs Applications
- Power management circuits
- Load switching applications
- Battery protection systems
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering information directly from Nexperia or authorized distributors to ensure compatibility with design requirements. Confirm package type and tape/reel specifications match manufacturing needs. Cross-reference part numbers to avoid confusion with similar variants.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage power switching applications requiring a P-channel configuration. Consider the thermal performance limits and on-resistance values when designing heat dissipation strategies. Ensure the gate drive voltage remains within the specified ±8V range for reliable operation.
Single FETs, MOSFETs Part Context
This component belongs to Nexperia's discrete semiconductor portfolio, specifically within the MOSFET category. It is part of a broader range of power devices aimed at providing efficient solutions for consumer electronics and industrial applications. Nexperia focuses on high-volume production of standardized components.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying electrical parameters and pin configurations.
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