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Product Detailed Parameters
- Description：RF TRANS NPN 10V 55GHZ 4-DFP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：55GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 12GHz
- Gain：13dB
- Power - Max：136mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 10mA, 2V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-343F
- Supplier Device Package：4-DFP
- Grade：-
- Qualification：-
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Overview
The ON5088 is an NPN silicon germanium microwave transistor designed for high-speed, low-noise applications. It utilizes 110 GHz fT technology and features a plastic SOT343F package with reverse pinning. Key electrical parameters include a maximum stable gain of 27 dB at 1.8 GHz and a noise figure of 1.1 dB at 12 GHz. The device supports a collector current up to 40 mA and total power dissipation of 136 mW. Limiting values specify a collector-base voltage of 10 V and a collector-emitter breakdown voltage of 3.0 V.
Feature Summary
- Low noise high gain microwave transistor
- High maximum stable gain of 27 dB at 1.8 GHz
- 110 GHz fT silicon germanium technology
Applications
- 2nd and 3rd LNA stage in DBS LNBs
- Satellite radio
- Low noise amplifiers for microwave communications systems
- WLAN and WiMAX applications
- Analog/digital cordless applications
Procurement Notes
Verify the specific ordering suffix (e.g., 115) against official documentation to confirm manufacturing origin details such as Hong Kong, Malaysia, or China. Ensure ESD handling precautions are strictly followed during assembly, referencing standards like ANSI/ESD S20.20 or IEC/ST 61340-5. Confirm the product status is active production rather than obsolete before finalizing procurement plans.
Selection Notes
Select this component for RF designs requiring low noise figures and high gain in the microwave spectrum. Verify that the operating conditions remain within the specified limiting values, particularly the 3.0 V collector-emitter voltage when the base is open. Ensure thermal management accommodates the 136 mW power dissipation limit at the solder point temperature.
Part Context
This part belongs to NXP's portfolio of silicon germanium RF transistors optimized for broadband performance. It serves as a discrete solution for signal amplification in communication infrastructure. The SOT343F package allows for compact surface-mount integration into dense PCB layouts typical of modern wireless devices.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the transition frequency (fT) of the ON5088?
The transition frequency is 55 GHz under conditions of IC = 25 mA, VCE = 2V, and f = 2 GHz.
How many leads does the SOT343F package have?
The SOT343F package is a plastic surface-mounted flat pack with 4 leads and reverse pinning.
What is the maximum collector-base voltage?
The maximum collector-base voltage (VCB) with an open emitter is 10 V.
