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The P1087_J18Z is a single P-Channel JFET transistor manufactured by onsemi, designed for low-power analog switching and amplification applications. It utilizes silicon technology and is housed in a TO-92-3 (TO-226AA) through-hole package. Key electrical specifications include a gate-source breakdown voltage of 30 V and a drain-source cutoff voltage of 5 V. The device exhibits an on-resistance of 150 Ohms and a power dissipation rating of 350 mW. Leakage current at Vgs=0 ranges from 80 uA to 240 uA. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix J18Z against the official datasheet to confirm pinout and marking consistency. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation. Ensure the procurement channel provides valid traceability records for this discontinued or limited-supply component. Cross-reference the part number with the latest onsemi product change notices to avoid obsolete stock.
Select this component when a P-Channel JFET with moderate on-resistance and high voltage tolerance is required. The TO-92 package suits prototyping and low-volume production where through-hole reliability is preferred. Consider the 30V breakdown limit for circuit design margins. Evaluate the leakage current specifications against sensitive application requirements before finalizing the design choice.
This component belongs to the onsemi JFET family, specifically engineered for discrete semiconductor applications. It serves as a fundamental building block for analog signal paths requiring high input impedance. The P1087 series represents a legacy line of junction field-effect transistors used in various electronic systems.
Public confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for direct replacements.