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The P2000DE45X168HPSA1 is a press pack IGBT module manufactured by Infineon Technologies. It features a 4500 V collector-emitter voltage rating and a continuous collector current of 2000 A at 25 °C. The device utilizes Trench IGBT technology with an integrated freewheeling diode. Key electrical parameters include a maximum collector-emitter saturation voltage of 35 V and a gate-emitter voltage limit of ±20 V. Operating temperatures range from -40 °C to +150 °C, with a leakage current of 350 nA.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with export regulations if shipping from the United States, as additional documentation may be necessary for this product category.
Select this module for applications requiring robust current handling and high voltage blocking capabilities. The press pack design facilitates direct mounting without traditional wire bonding. Consider thermal management requirements due to the high power density inherent in this class of silicon modules.
This component belongs to Infineon's press pack IGBT series, designed for chassis mount configurations. It represents a discrete solution distinct from multi-module packages like EconoPACK. The disc-shaped housing accommodates high-current industrial environments where reliability under pulse loads is critical.
Consult official substitution lists for compatible alternatives. Verify that any replacement maintains identical voltage ratings, current capabilities, and mechanical dimensions to ensure proper fit and function in existing assemblies.