P2000DL45X168HPSA1

P2000DL45X168HPSA1

$6,381.61
  • Description:PRESS PACK IGBT
  • Series:-

SKU:5d12b73af48a Category: Brand:

  
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Product Detailed Parameters

  • Description:PRESS PACK IGBT
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 2000A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:TO-200AF
  • Supplier Device Package:BG-P16826K-1
  • Voltage - Collector Emitter Breakdown (Max):4500 V
  • Current - Collector (Ic) (Max):2000 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):200 µA
  • Input Capacitance (Cies) @ Vce:420 nF @ 25 V

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P2000DL45X168HPSA1

Overview

The P2000DL45X168HPSA1 is a press-pack IGBT with an integrated freewheeling diode, utilizing Trench IGBT 3 technology. It features a collector-emitter voltage (VCES) of 4500 V and a continuous DC collector current (IC nom) of 2000 A at TC = 105°C. The device supports a repetitive peak collector current (ICRM) of 4000 A and withstands short-circuit currents up to 10.5 kA. The integrated diode offers a repetitive peak reverse voltage (VRRM) of 4500 V and a continuous forward current (IF) of 2000 A. Maximum junction temperature is 150°C, with an operating range from -40°C to +150°C.

Feature Summary

  • Long-term short-circuit failure behavior for high reliability
  • High dynamic robustness under switching conditions
  • Low collector-emitter saturation voltage (VCEsat)
  • Robust construction suitable for extreme thermal cycling

Applications

  • High power converters
  • Medium voltage converters
  • Modular Multi-Level Inverters (MMC) for HVDC and FACTS
  • DC breakers

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the clamping force requirements align with the specified 50 to 80 kN range for proper mechanical contact. Confirm compliance with RoHS directives and check for any specific material content disclosures required by your procurement standards before finalizing orders.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities and substantial current handling in press-pack configurations. Evaluate the thermal resistance parameters carefully, noting the maximum junction-to-case thermal resistance values for both the IGBT and diode sections. Ensure the gate drive circuitry can accommodate the specified internal gate resistance and charge requirements for optimal switching performance.

Part Context

This part belongs to the P2000DL series of press-pack IGBTs designed for heavy-duty industrial and traction applications. It represents a high-power discrete solution intended to replace traditional bolted or soldered modules in scenarios demanding superior short-circuit robustness and simplified mechanical mounting through pressure contact interfaces.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Verify compatibility with existing cooling plates and gate driver specifications if considering alternative high-voltage press-pack devices.

P2000DL45X168HPSA1P2000DL45X168HPSA1
$6,381.61
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