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The P2000DL45X168HPSA1 is a press-pack IGBT with an integrated freewheeling diode, utilizing Trench IGBT 3 technology. It features a collector-emitter voltage (VCES) of 4500 V and a continuous DC collector current (IC nom) of 2000 A at TC = 105°C. The device supports a repetitive peak collector current (ICRM) of 4000 A and withstands short-circuit currents up to 10.5 kA. The integrated diode offers a repetitive peak reverse voltage (VRRM) of 4500 V and a continuous forward current (IF) of 2000 A. Maximum junction temperature is 150°C, with an operating range from -40°C to +150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure that the clamping force requirements align with the specified 50 to 80 kN range for proper mechanical contact. Confirm compliance with RoHS directives and check for any specific material content disclosures required by your procurement standards before finalizing orders.
Select this component for applications requiring high voltage blocking capabilities and substantial current handling in press-pack configurations. Evaluate the thermal resistance parameters carefully, noting the maximum junction-to-case thermal resistance values for both the IGBT and diode sections. Ensure the gate drive circuitry can accommodate the specified internal gate resistance and charge requirements for optimal switching performance.
This part belongs to the P2000DL series of press-pack IGBTs designed for heavy-duty industrial and traction applications. It represents a high-power discrete solution intended to replace traditional bolted or soldered modules in scenarios demanding superior short-circuit robustness and simplified mechanical mounting through pressure contact interfaces.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Verify compatibility with existing cooling plates and gate driver specifications if considering alternative high-voltage press-pack devices.