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PBHV3160Z-QX is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS PNP 600V 0.1A SOT-223. Review the specifications below when checking this part for your BOM.
The PBHV3160Z-Q is a PNP high-voltage low VCEsat transistor housed in an SOT223 (SC-73) surface-mounted plastic package. It features a collector-emitter voltage of -600 V and a collector current capability of -0.1 A. The device exhibits a DC current gain (hFE) ranging from 70 to 130 at -10 mA, with a typical value of 130. Collector-emitter saturation voltage is specified between -150 mV and -250 mV under specific drive conditions. Total power dissipation reaches 1.4 W on a standard footprint and 0.65 W in free air. Thermal resistance from junction to ambient is typically 190 K/W.
Verify the component marking code HV316Z against the datasheet to confirm authenticity. Ensure the ordering suffix matches the required package variant. Confirm that the application environment stays within the specified thermal limits and absolute maximum ratings to maintain device integrity and performance standards.
Select this component when high voltage isolation and low saturation losses are critical. The SOT223 package provides adequate heat dissipation for medium-power tasks. Consider the -600 V rating for robust operation in inductive load switching scenarios where standard transistors might fail due to voltage spikes or breakdown.
This part belongs to Nexperia's portfolio of high-voltage bipolar transistors designed for general-purpose and specialized switching roles. The SOT223 package offers a compact form factor compared to larger through-hole alternatives while maintaining sufficient power handling capabilities for industrial and consumer electronics applications.
No public confirmed substitute part numbers are available in the provided documentation.
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