PBHV8110DA-AU_R1_000A1

Single Bipolar Transistors Overview

The PBHV8110DA-AU_R1_000A1 is a silicon NPN epitaxial low Vce(sat) transistor manufactured by Panjit International Inc. It operates with a collector-emitter voltage of 100V and a continuous collector current of 1A, supporting pulse currents up to 3A. The device features a maximum power dissipation of 1.25W at 25°C ambient temperature and a junction-to-ambient thermal resistance of 100°C/W. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at 500mA/5V, and a collector-emitter saturation voltage of 220mV max at 1A/0.1A. Transition frequency is rated at 100MHz.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• High collector current capability suitable for moderate load applications
• Excellent DC current gain characteristics across operating ranges
• Compliant with EU RoHS 2.0 standards using lead-free manufacturing

Single Bipolar Transistors Applications

• General purpose switching circuits
• Driver stages in electronic control systems
• Power management modules requiring low saturation loss

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details and marking codes. Confirm that the component meets required automotive or industrial qualification standards if applicable, as standard versions may lack specific reliability certifications. Ensure compatibility with SOT-23 mounting pads during PCB layout.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with high current handling and low saturation voltage is required in a compact surface-mount package. Compare hFE ranges and Vce(sat) limits against circuit requirements to ensure adequate drive margins. Consider thermal derating curves for high-temperature environments to maintain safe junction temperatures.

Single Bipolar Transistors Part Context

This part belongs to the PBHV8110DA series of low Vce(sat) transistors designed for general-purpose switching. It is electrically complementary to the PNP variant PBHV9110DA. The device utilizes a silicon epitaxial structure housed in an SOT-23 case, optimized for space-constrained designs requiring robust current handling capabilities.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies PBHV9110DA as the PNP complement. No other direct substitute part numbers are documented in the provided source material.