PBHV9040TVL

Single Bipolar Transistors Overview

The PBHV9040TVL is a PNP high-voltage low VCEsat transistor manufactured by Nexperia, housed in a SOT23 (TO-236AB) surface-mounted device plastic package. It features a collector-emitter voltage (VCEO) of -400 V and a peak collector-emitter voltage (VCESM) of -500 V. The maximum continuous collector current (IC) is -0.25 A, with a peak collector current (ICM) of -0.5 A. DC current gain (hFE) ranges from 100 to 200 at IC = -50 mA. Total power dissipation is 300 mW at Tamb ≤ 25 °C. Junction temperature max is 150 °C, operating ambient range is -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• High voltage capability with up to 500 V peak collector-emitter voltage
• Low collector-emitter saturation voltage for efficient switching
• High collector current gain maintained at elevated currents
• Compact SOT23 small surface-mounted device plastic package

Single Bipolar Transistors Applications

• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• Switch Mode Power Supply (SMPS)

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'VL' against the official Nexperia datasheet to confirm reel packaging specifications and manufacturing site codes. Ensure the component meets non-automotive qualification requirements as stated in the product data sheet revision history. Cross-reference the marking code 'W%' with production documentation to validate authenticity and traceability before integration into designs.

Single Bipolar Transistors Selection Notes

Select this PNP transistor for applications requiring high voltage blocking and low saturation losses in compact spaces. Compare hFE performance curves against load requirements to ensure adequate drive capability. Evaluate thermal resistance characteristics relative to PCB footprint constraints. Confirm that the -400 V rating exceeds circuit peak voltages to prevent breakdown under transient conditions.

Single Bipolar Transistors Part Context

This component belongs to the PBHV series of high-voltage transistors designed for general-purpose switching and amplification. It serves as the PNP complement to the NPN PBHV8540T. The device utilizes silicon technology optimized for low VCEsat while maintaining high voltage withstand capabilities in a standard SMD form factor suitable for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The NPN complement PBHV8540T is documented as a related part within the same family. No other direct substitute part numbers are explicitly confirmed in the provided public documentation.