PBHV9540XF

Single Bipolar Transistors Overview

The PBHV9540XF is a PNP high-voltage low VCEsat transistor manufactured by Nexperia, housed in a SOT89 (SC-62) medium power Surface-Mounted Device plastic package. It features a collector-emitter voltage (VCEO) of -400 V and a continuous collector current (IC) of -0.5 A. The device supports a peak collector current (ICM) of -1 A for single pulses up to 1 ms. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 450 at IC = -20 mA, and a collector-emitter saturation resistance (RCEsat) of 2000 mΩ under pulsed conditions.

Single Bipolar Transistors Feature Summary

• High voltage capability with a -400 V collector-emitter breakdown rating
• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability supporting both continuous and peak loads
• High DC current gain maintained at elevated collector currents

Single Bipolar Transistors Applications

• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• High Intensity Discharge (HID) front lighting
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure the selected variant matches the required surface-mount footprint and thermal dissipation capabilities for the target application environment.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high voltage handling with low saturation losses. Consider the SOT89 package's thermal resistance characteristics when designing heat dissipation strategies. Verify that the operating temperature range aligns with the system's ambient conditions and power derating requirements.

Single Bipolar Transistors Part Context

This device belongs to Nexperia's high-voltage bipolar junction transistor portfolio, designed for robust performance in power switching applications. It serves as the PNP complement to the NPN PBHV8540X, offering matched characteristics for complementary push-pull or bridge configurations in high-voltage circuits.

Single Bipolar Transistors Replacement Considerations

The NPN complement is the PBHV8540X. For automotive applications, consult Nexperia for qualified (-Q) product alternatives, as this specific part is not automotive qualified.

Single Bipolar Transistors FAQ

Is the PBHV9540X suitable for automotive applications?

No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified. Customers must use dedicated automotive-qualified alternatives for such environments.

What is the maximum peak collector current supported?

The device supports a peak collector current (ICM) of -1 A for single pulses with a duration of tp ≤ 1 ms.

How does the DC current gain vary with temperature?

The DC current gain (hFE) is specified between 140 and 450 at 25 °C. Typical values show variation across temperatures, with gain generally decreasing at higher temperatures like 100 °C compared to 25 °C.