PBR951,215

$0.35

Description：RF TRANS NPN 10V 8GHZ SOT-23
Series：-

SKU:ab252540e747 Category: Bipolar RF Transistors Brand: NXP USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 8GHZ SOT-23
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：1.3dB ~ 2dB @ 1GHz ~ 2GHz
Gain：-
Power - Max：365mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 6V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23 (TO-236AB)
Grade：-
Qualification：-

Download product information

PBR951,215

Overview

The PBR951,215 is a silicon NPN transistor in a surface-mount SOT23 package designed for UHF wideband applications. It features a transition frequency of 8 GHz and a maximum unilateral power gain of 14 dB at 1 GHz. The device operates with a collector-base voltage up to 20 V and a total power dissipation of 365 mW at a soldering point temperature of 60 °C. Key electrical characteristics include a noise figure as low as 1.3 dB at 1 GHz and a DC current gain ranging from 50 to 200. Gold metallization ensures high reliability for RF front-end integration.

Feature Summary

Small physical size suitable for compact designs
Low noise performance for sensitive signal processing
High gain capability for efficient amplification
Gold metallization for enhanced reliability

Applications

RF front ends for analog and digital cellular telephones
Cordless phone systems
Radar detectors
Satellite TV-tuners
Communication and instrumentation systems

Procurement Notes

Verify the component matches the original Philips Semiconductors specification dated August 10, 1998. Confirm the SOT23 package outline and pin configuration (Base, Emitter, Collector) align with design requirements. Ensure thermal management supports the specified junction-to-soldering point resistance of 315 K/W under operating conditions.

Selection Notes

Select this transistor for UHF wideband applications requiring low noise and high gain in a small form factor. Consider the 8 GHz transition frequency for GHz-range operations. Evaluate the 365 mW power dissipation limit against the expected thermal environment, specifically monitoring the soldering point temperature to prevent exceeding absolute maximum ratings.

Part Context

The PBR951 is a discrete semiconductor component manufactured by Philips Semiconductors, now part of NXP. It belongs to the SC14 category within Discrete Semiconductors. The datasheet supersedes the version from June 9, 1998, providing final product specifications for reliable integration into various RF communication and instrumentation hardware.