PBSM5240PFH,115

Overview

The PBSM5240PFH,115 is a hybrid module integrating a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an N-channel Trench MOSFET within a DFN2020-6 (SOT1118) package. The BISS section supports a collector-emitter voltage of -40 V and continuous collector current of -1.8 A, with a peak current of -3 A. The MOSFET section provides a drain-source voltage of 30 V and a drain current of 0.66 A. Key electrical parameters include a typical saturation resistance of 240 mΩ for the transistor and an on-state resistance of 370 mΩ for the MOSFET at 25°C.

Feature Summary

• Combines a high-efficiency PNP BISS transistor with an N-channel Trench MOSFET in a single leadless package.
• Delivers very low collector-emitter saturation voltage to minimize heat generation and improve energy efficiency.
• Offers high collector and drain current capabilities suitable for power management tasks.
• Requires smaller printed-circuit board area compared to conventional discrete transistor solutions.

Applications

• Load switch circuits
• Battery-driven devices
• Power management systems
• Charging circuits
• Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest documentation before finalizing procurement orders. Confirm that the component status aligns with project requirements, as product availability and manufacturing statuses are subject to change by Nexperia. Ensure compliance with RoHS directives and export control regulations applicable to your region.

Selection Notes

Select this component when space-constrained designs require both switching and amplification functions. The integrated BISS transistor offers superior saturation performance over standard bipolar transistors. The accompanying N-channel MOSFET provides efficient switching for lower current loads. Evaluate thermal dissipation requirements based on the specific PCB copper pad area and layer configuration used in the design.

Part Context

This device belongs to Nexperia's portfolio of mixed-signal modules combining bipolar and MOS technologies. It utilizes the DFN2020-6 plastic thermal-enhanced ultra-thin small outline package without leads. The marking code for this specific part number is '1T'. It is designed for surface-mount assembly using standard reflow soldering processes compatible with the specified footprint dimensions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum repetitive peak collector current for the PNP transistor section?

The maximum repetitive peak collector current (ICRM) is -2 A.

What is the gate-source voltage rating for the integrated N-channel MOSFET?

The maximum gate-source voltage (VGS) is ±8 V.

How does the package type contribute to the device's application benefits?

The leadless DFN2020-6 package reduces the required printed-circuit board area and allows for a lower profile compared to conventional transistor packages.