PBSS306PZ,135

Single Bipolar Transistors Overview

The PBSS306PZ is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor housed in an SOT223 (SC-73) surface-mounted package. It provides a collector-emitter voltage of -100 V and a continuous collector current of -4.1 A, with a peak pulse current capability of 8.2 A. The device features a typical collector-emitter saturation resistance of 56 mΩ under specified pulsed conditions. It is qualified to the AEC-Q101 standard for automotive applications.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for high efficiency
• High collector current gain at elevated currents
• AEC-Q101 qualified for automotive reliability
• Reduced printed-circuit board area compared to conventional transistors

Single Bipolar Transistors Applications

• High-voltage DC-to-DC conversion
• High-voltage MOSFET gate driving
• High-voltage motor control
• Automotive power switches

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm that the application environment stays within the absolute maximum ratings defined in the datasheet. Ensure thermal management strategies align with the provided derating curves for the target PCB type. Check for any recent revision updates to the product data sheet before finalizing designs.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP solution with low saturation voltage is required for high-current switching. The BISS technology offers improved efficiency over standard small-signal transistors. Consider the SOT223 package size constraints and thermal dissipation capabilities relative to the expected duty cycle and ambient temperature conditions.

Single Bipolar Transistors Part Context

This part belongs to Nexperia's BISS transistor portfolio, designed to minimize heat generation while maintaining high current handling in small packages. It serves as the PNP complement to the N-channel PBSS306NZ. The technology focuses on reducing saturation voltage to improve overall system efficiency in power management circuits.

Single Bipolar Transistors Replacement Considerations

The official NPN complement is the PBSS306NZ. Verify pinout compatibility if substituting with other PNP transistors from different manufacturers. Ensure replacement devices meet or exceed the -100 V voltage rating and -4.1 A current capacity requirements.

Single Bipolar Transistors FAQ

What is the maximum peak collector current?

The maximum peak collector current is 8.2 A for a single pulse duration of 1 ms or less.

Is this transistor suitable for automotive use?

Yes, the PBSS306PZ is qualified according to the AEC-Q101 standard and is recommended for automotive applications.

What is the typical DC current gain at 1 A collector current?

The typical DC current gain (hFE) is 260 when the collector current is -1 A and the collector-emitter voltage is -2 V.