PBSS3515VS,115

Overview

The PBSS3515VS,115 is a PNP low VCEsat double transistor housed in an SOT666 ultra-small and flat lead Surface-Mounted Device plastic package. It features a total power dissipation of 300 mW and a collector-emitter voltage (VCEO) of -15 V per transistor. The device supports a maximum collector current (IC) of -500 mA and offers a DC current gain (hFE) ranging from 90 to 200 depending on operating conditions. Transition frequency (fT) reaches up to 280 MHz at -100 mA. The package dimensions are 1.6 mm x 1.2 mm x 0.55 mm, providing self-alignment during soldering due to straight leads.

Feature Summary

• Ultra-thin SOT666 package reduces required PCB area compared to SC75/SC89 packages
• Low collector-emitter saturation voltage for efficient switching
• Straight leads enable self-alignment during the soldering process
• Improved thermal behavior resulting from flat lead design

Applications

• General purpose switching and muting circuits
• Low frequency driver circuits
• Audio frequency general purpose amplifier applications
• Battery driven equipment such as mobile phones and video cameras

Procurement Notes

Verify the component marking code '35' against the datasheet to confirm authenticity. Ensure the ordering suffix ',115' matches the specific reel or tape configuration required for automated assembly processes. Confirm that the application environment remains within the specified non-automotive qualification limits provided by Nexperia.

Selection Notes

Select this component when space constraints require replacing two discrete transistors with a single dual unit. Consider the -15 V collector-emitter voltage rating and -500 mA current capability for circuit design. Evaluate the thermal resistance characteristics if operation exceeds standard ambient temperature ranges without adequate PCB copper heat sinking.

Part Context

This part belongs to the PBSS series of low VCEsat double transistors manufactured by Nexperia. It serves as the PNP complement to the NPN PBSS2515VS model. Both devices utilize the same SOT666 package footprint, allowing designers to implement complementary push-pull configurations within minimal board space while maintaining consistent thermal profiles.

Replacement Considerations

Direct replacement options include other PNP double transistors in the SOT666 package with matching -15 V ratings. Verify pinout compatibility between TR1 and TR2 emitters and collectors before substitution. Ensure the alternative device meets the same 300 mW total power dissipation requirement under similar thermal conditions.