Single Bipolar Transistors PBSS4021NT,215 product image

PBSS4021NT,215

$0.62
  • Description:TRANS NPN 20V 4.3A TO-236AB
  • Series:-

SKU:754971f66e28 Category: Brand:

  
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PBSS4021NT,215 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 20V 4.3A TO-236AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PBSS4021NT,215

  • Description:TRANS NPN 20V 4.3A TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4.3 A
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 400mA, 4A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 2A, 2V
  • Power - Max:1.1 W
  • Frequency - Transition:165MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB
  • Grade:Automotive
  • Qualification:AEC-Q100

Single Bipolar Transistors datasheet and documents for PBSS4021NT,215

PBSS4021NT,215

Single Bipolar Transistors Overview

The PBSS4021NT is an NPN low VCEsat Breakthrough in Small Signal (BISS) transistor housed in a SOT23 small Surface-Mounted Device plastic package. It features a collector-emitter voltage of 20 V and a continuous collector current capability of 4.3 A, with a peak collector current of 8 A for single pulses up to 1 ms. The device exhibits a typical collector-emitter saturation resistance of 32.5 mΩ under specific pulsed conditions. It is qualified according to the AEC-Q101 standard for automotive applications.

Single Bipolar Transistors Feature Summary

  • Very low collector-emitter saturation voltage
  • High collector current capability
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified

Single Bipolar Transistors Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)

Single Bipolar Transistors Procurement Notes

Verify the component against the official Nexperia datasheet dated 20 September 2024. Confirm the part number matches PBSS4021NT and the marking code corresponds to the manufacturing site placeholder. Ensure the package type is SOT23 and that the device meets the required AEC-Q101 qualification status for your specific application environment.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high current handling and low saturation voltage is required. The SOT23 package offers a smaller PCB area compared to conventional transistors. Consider the thermal resistance characteristics and power dissipation limits based on the intended PCB layout and ambient temperature conditions.

Single Bipolar Transistors Part Context

This device belongs to the BISS family of low VCEsat transistors designed for efficient switching. The PNP complement is the PBSS4021PT. The product is manufactured by Nexperia and is suitable for general-purpose switching applications where space constraints and energy efficiency are critical design factors.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the PBSS4021PT. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum peak collector current?

The maximum peak collector current is 8 A for a single pulse with a duration of tp ≤ 1 ms.

Is this component suitable for automotive use?

Yes, the PBSS4021NT is qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.

What is the DC current gain range?

The DC current gain (hFE) typically ranges from 150 to 600 depending on the collector current and temperature conditions.

PBSS4021NT,215PBSS4021NT,215
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