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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 20V 6.3A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：6.3A
- Voltage - Collector Emitter Breakdown (Max)：20V
- Vce Saturation (Max) @ Ib, Ic：350mV @ 325mA, 6.5A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 4A, 2V
- Power - Max：2.3W
- Frequency - Transition：105MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The PBSS4021SP,115 is a PNP/PNP Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in an SOT96-1 (SO8) surface-mount package with eight leads and a body width of 3.9 mm. The device features a collector-emitter voltage (VCEO) of -20 V and a continuous collector current (IC) of -6.3 A. Peak collector current (ICM) reaches -15 A for single pulses up to 1 ms. Total power dissipation is rated at 0.73 W on FR4 PCBs and 1.7 W on ceramic substrates. The transition frequency is 105 MHz, and the maximum junction temperature is 150 °C.
Feature Summary
- Low collector-emitter saturation voltage for high efficiency
- High collector current capability for load switching
- High DC current gain at elevated currents
- Reduced printed-circuit board area requirements
Applications
- Loadswitch circuits
- Battery-driven devices
- Power management systems
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the component against the official Nexperia datasheet specifications before integration. Confirm that the ordering suffix matches the required packing method, as variations exist between tape and reel quantities. Ensure thermal design accounts for the specific PCB material and copper weight used in the final assembly to maintain safe operating temperatures.
Selection Notes
Select this component when low saturation voltage and high current density are critical within an SO8 footprint. Evaluate thermal resistance based on the target substrate, as dissipation varies significantly between standard FR4 and ceramic boards. Verify that the required peak current does not exceed the 15 A limit during transient conditions.
Part Context
This part belongs to the BISS transistor family designed for compact power applications. It serves as the PNP/PNP complement to the NPN/NPN PBSS4021SN variant. Both share similar electrical characteristics but differ in polarity and package pinout configuration for dual-channel operation.
Replacement Considerations
The PBSS4021SN is the NPN/NPN complementary counterpart within the same product family. Direct substitution requires verifying polarity compatibility and ensuring the circuit design supports the opposite charge carrier type.
