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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 30V 4.8A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：4.8A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：510mV @ 250mA, 5A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 2A, 2V
- Power - Max：2.3W
- Frequency - Transition：115MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The PBSS4032SP,115 is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia USA Inc. It is housed in an SOT96-1 (SO8) medium power Surface-Mounted Device plastic package. The device features a collector-emitter voltage of -30 V and a continuous collector current of -4.8 A per transistor, with a peak pulse current capability of -10 A. Total power dissipation reaches up to 1.7 W on FR4 PCBs and 2.3 W on ceramic substrates. Key electrical characteristics include a typical DC current gain of 250 at -2 A collector current and a transition frequency of 115 MHz.
Feature Summary
- Low collector-emitter saturation voltage for improved efficiency
- Optimized switching time for high-speed applications
- High collector current capability and high current gain at elevated currents
- Reduced Printed-Circuit Board area requirements compared to conventional transistors
Applications
- DC-to-DC conversion
- Battery-driven devices
- Power management circuits
- Charging circuits
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to ensure correct packing methods and tape-and-reel specifications. Confirm that the component status remains active before initiating procurement processes. Cross-reference the marking code '4032SP' with the datasheet to validate authenticity upon receipt.
Selection Notes
Select this component when designing circuits requiring dual PNP transistors in a compact SO8 footprint. Ensure the thermal design accommodates the specified junction-to-ambient resistance values for the intended PCB copper area. Verify that the required collector current does not exceed the -4.8 A limit under continuous operation conditions.
Part Context
This part belongs to the Nexperia BISS transistor family, designed to replace discrete transistor pairs in space-constrained designs. It serves as a dual PNP solution within the PBSS4032 series, offering enhanced performance over standard small-signal packages while maintaining compatibility with existing surface-mount assembly processes.
Replacement Considerations
The datasheet identifies the NPN/NPN complement as PBSS4032SN. No other direct replacement part numbers are documented in the provided source material.
