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Product Detailed Parameters
- Description：PBSS4130PAN-Q/SOT1118/HUSON6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PBSS4130PAN-Q is a dual NPN low VCEsat transistor in a DFN2020-6 (SOT1118) leadless package. It features a collector-emitter voltage of 30 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device exhibits a maximum collector-emitter saturation resistance of 190 mΩ at IC = 1 A and IB = 0.1 A. DC current gain ranges from 180 to 370 depending on operating conditions. Thermal resistance from junction to ambient varies between 86 K/W and 338 K/W based on PCB configuration. The component operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- Qualified according to AEC-Q101 for automotive applications
- Very low collector-emitter saturation voltage for high efficiency
- High collector current gain at elevated currents
- Leadless thermal enhanced ultra thin small outline package
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches for motors and fans
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and reel specifications. Confirm that the AEC-Q101 qualification status aligns with target automotive reliability requirements. Ensure the DFN2020-6 footprint matches the design layout constraints before finalizing procurement orders.
Selection Notes
Select this component when low saturation voltage and high current gain are critical for power efficiency. The dual NPN configuration allows for complementary circuit designs without requiring separate PNP devices. Evaluate thermal performance based on the specific PCB copper thickness and layer count to ensure junction temperatures remain within safe operating limits during peak load conditions.
Part Context
This part belongs to Nexperia's Breakthrough In Small Signal (BISS) transistor family, designed for low power dissipation and high efficiency. It serves as the NPN/NPN complement to the PBSS4130PANP-Q and pairs with the PBSS5130PAP-Q for complete bridge or push-pull configurations in compact surface-mount designs.
Replacement Considerations
Direct functional equivalents include the PBSS4130PANP-Q for NPN/PNP configurations and the PBSS5130PAP-Q for PNP/PNP setups. Verify pinout compatibility and thermal characteristics when substituting with other BISS series transistors.
