PBSS4140DPN,115

$0.49

Description：TRANS NPN/PNP 40V 1A 6-TSOP
Series：-

SKU:515d2826fee2 Category: Bipolar Transistor Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS NPN/PNP 40V 1A 6-TSOP
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP
Current - Collector (Ic) (Max)：1A
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：500mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 500mA, 5V
Power - Max：600mW
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：6-TSOP
Grade：Automotive
Qualification：AEC-Q100

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PBSS4140DPN,115

Overview

The Nexperia PBSS4140DPN,115 is a low VCEsat NPN/PNP transistor pair housed in an SC-74 (SOT457) plastic package. It features a maximum collector-emitter voltage of 40 V and a continuous collector current of 1 A per transistor. The device supports a peak collector current of 2 A with a single pulse duration up to 1 ms. Total power dissipation reaches 600 mW at ambient temperatures up to 25 °C. The transition frequency is specified at 150 MHz. Operating junction temperature ranges from -65 °C to 150 °C.

Feature Summary

Replaces two SOT23 packaged transistors on the same PCB area
AEC-Q101 qualified for automotive applications
Low collector-emitter saturation voltage reduces heat generation

Applications

General purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery driven equipment such as mobile phones and video cameras

Procurement Notes

Verify the component against the official Nexperia datasheet revision v.2 dated November 9, 2023. Confirm the marking code M2 matches the physical device. Ensure the TSOP6 package variant aligns with design requirements. Check for AEC-Q101 qualification status if used in automotive contexts. Validate thermal resistance parameters during system integration.

Selection Notes

Select this component when space constraints require replacing dual SOT23 transistors with a single surface-mount unit. Consider the 40 V rating and 1 A current capability for load switching tasks. Evaluate the low saturation voltage benefits for efficiency in battery-powered systems. Verify that the 600 mW total power dissipation meets thermal management needs.

Part Context

This part belongs to the PBSS4140DPN series of low VCEsat transistor pairs. It utilizes the SOT457 (TSOP6) package configuration. The device integrates both NPN and PNP structures within a single compact housing. It serves as a direct replacement for discrete dual-transistor solutions in space-sensitive designs.