PBSS4140T-QVL

Single Bipolar Transistors Overview

The PBSS4140T-Q is an NPN low VCEsat transistor housed in a small SOT23 Surface-Mounted Device plastic package. It features a collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 1 A, with a peak collector current (ICM) capability of 2 A. The device exhibits a typical collector-emitter saturation resistance (RCEsat) of 260 mΩ under pulsed conditions at IC = 500 mA and IB = 50 mA. Total power dissipation reaches 450 mW at Tamb ≤ 25 °C when mounted on an FR4 PCB with a 1 cm² collector pad. Junction temperature ranges from -65 °C to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• High current capabilities supporting up to 1 A continuous operation
• Improved device reliability due to reduced heat generation
• Qualified according to AEC-Q101 for automotive applications

Single Bipolar Transistors Applications

• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment such as mobile phones and video cameras

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required variant, as suffixes may indicate packaging or manufacturing site differences not detailed in the datasheet. Confirm AEC-Q101 qualification status if automotive compliance is mandatory. Ensure the SOT23 footprint dimensions align with the design layout. Check for any recent revision history updates that might affect limiting values or thermal characteristics before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low saturation voltage to minimize power loss in high-current switching paths. The SOT23 package offers a compact solution for space-constrained boards. Consider the thermal resistance values when determining heat sinking requirements, especially at higher ambient temperatures. Verify that the base drive current can achieve the specified saturation levels for optimal performance in digital or linear switching applications.

Single Bipolar Transistors Part Context

This part belongs to Nexperia's portfolio of low VCEsat transistors designed for general-purpose switching. It serves as the NPN complement to the PBSS5140T PNP transistor. The device is optimized for battery-driven equipment and supply line switching where efficiency and reliability are critical. It is suitable for use in automotive electronics due to its AEC-Q101 qualification.

Single Bipolar Transistors Replacement Considerations

The PBSS5140T is the documented PNP complement. No direct NPN substitutes are listed in the provided documentation. Verify pinout compatibility and electrical parameters against existing designs before substitution.

Single Bipolar Transistors FAQ

What is the maximum peak collector current?

The maximum peak collector current (ICM) is 2 A for single pulses with a duration tp ≤ 1 ms.

Is this component qualified for automotive use?

Yes, the PBSS4140T-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the typical collector-emitter saturation resistance?

The typical RCEsat is 260 mΩ when measured at IC = 500 mA, IB = 50 mA, pulsed, tp ≤ 300 µs, δ ≤ 0.02, and Tamb = 25 °C.