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The PBSS4160DS-QH is a dual NPN bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. It features two independent NPN transistors housed in a compact 6-TSOP (SC-74/SOT-457) surface-mount package. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 1 A per transistor. Key electrical characteristics include a transition frequency of 220 MHz, a power dissipation rating of 420 mW, and a DC current gain minimum of 200 at 500 mA. It operates within a temperature range of -55°C to +150°C and holds AEC-Q100 qualification for automotive applications.
Verify the specific suffix against official Nexperia documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets the required AEC-Q100 grade for your target application. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a dual NPN configuration is required in a small outline package. Consider the 60 V voltage rating and 1 A current capacity for suitable load requirements. Evaluate the thermal management needs given the 420 mW power dissipation limit in the TSOP-6 package. Confirm compatibility with existing PCB footprints for SOT-457 or SC-74 packages.
This part belongs to the PBSS4160 series of dual NPN transistors from Nexperia. The series offers various package options including SOT-89, UMT, and DFN configurations. The DS variant specifically denotes the 6-TSOP package type. These devices are engineered for general-purpose switching and amplification tasks across industrial and automotive sectors.
Compatible substitutes include other Nexperia dual NPN arrays such as PBSS4160DS,115. Verify pinout compatibility and electrical parameter equivalence before substitution. Check alternative manufacturers offering equivalent 60V dual NPN TSOP-6 components.