PBSS4160PAN,115

Overview

The PBSS4160PAN is a dual NPN transistor in a DFN2020-6 (SOT1118) leadless package. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 1 A per transistor, with a peak current (ICM) of 1.5 A. The device exhibits a low collector-emitter saturation resistance (RCEsat) of 240 mΩ at IC = 0.5 A and IB = 50 mA. DC current gain (hFE) ranges from 70 to 430 depending on collector current. Transition frequency (fT) is typically 175 MHz. Total power dissipation reaches 2 W on a 4-layer PCB with a 1 cm² collector pad.

Feature Summary

• Very low collector-emitter saturation voltage for high energy efficiency
• High collector current capability with reduced Printed-Circuit Board requirements
• Leadless ultra-thin plastic package with exposed thermal pad

Applications

• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches such as motors and fans

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets the required environmental standards for the intended application before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with low saturation voltage is required in a compact surface-mount footprint. Ensure the PCB layout supports the thermal performance specified in the data sheet, particularly regarding copper area and layer count for adequate heat dissipation.

Part Context

This part belongs to the Nexperia PBSS4160 series of low VCEsat transistors. The NPN/NPN variant complements the NPN/PNP (PBSS4160PANP) and PNP/PNP (PBSS5160PAP) versions within the same package family, offering design flexibility for various switching topologies.

Replacement Considerations

Direct substitutes include PBSS4160PANP and PBSS5160PAP from the same series. Verify pin compatibility and electrical parameters before substitution.