ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN/PNP 30V 2A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：2A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：290mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 1A, 2V
- Power - Max：510mW
- Frequency - Transition：120MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
Download product information
Overview
The PBSS4230PANP is a dual NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor housed in a leadless DFN2020-6 (SOT1118) package. It supports a collector-emitter voltage of 30 V and a continuous collector current of 2 A per transistor, with a peak current capability of 3 A. The device features very low saturation resistance, typically 145 mΩ for the NPN section and 195 mΩ for the PNP section at 1 A. Total power dissipation reaches up to 2 W on a 4-layer PCB. It is qualified under AEC-Q101 standards.
Feature Summary
- Very low collector-emitter saturation voltage for high efficiency
- High collector current capability with reduced heat generation
- AEC-Q101 qualified for automotive applications
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Procurement Notes
Verify the component marking code '2J' against the datasheet to confirm authenticity. Ensure the ordering suffix matches the required tape and reel configuration. Confirm that the DFN2020-6 footprint aligns with the provided soldering guidelines before finalizing procurement orders.
Selection Notes
Select this component when low saturation voltage and high current density are required in a compact surface-mount form factor. Consider the thermal resistance characteristics based on the specific PCB copper thickness and layer count. Verify that the 30 V rating meets the circuit's maximum operating voltage requirements.
Part Context
This part belongs to the Nexperia BISS transistor family, designed for low power consumption and high collector current. It serves as the NPN/PNP complement to the PBSS4230PAN (NPN/NPN) and pairs with the PBSS5230PAP (PNP/PNP). The technology utilizes innovative mesh-emitter structures to minimize saturation resistance.
Replacement Considerations
Direct functional substitutes within the same package include the PBSS4230PAN for NPN/NPN configurations or the PBSS5230PAP for PNP/PNP setups. Cross-referencing pinout compatibility and saturation voltage specifications is essential when evaluating alternative components from other manufacturers.
