PBSS4260PAN,115

Overview

The PBSS4260PAN,115 is a dual NPN Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia USA Inc. It is housed in a leadless DFN2020-6 (SOT1118) surface-mount package with dimensions of 2 x 2 x 0.65 mm. The device supports a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current (IC) of 2 A per transistor, with a peak pulse current (ICM) of 3 A. Key electrical characteristics include a typical DC current gain (hFE) ranging from 120 to 430 at 1 A, and a transition frequency (fT) of up to 140 MHz. Total power dissipation is rated at 510 mW at 25 °C ambient temperature.

Feature Summary

• Very low collector-emitter saturation voltage for high efficiency
• High collector current capability with reduced PCB requirements
• AEC-Q101 qualified for automotive applications

Applications

• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

Procurement Notes

Verify the complete part number including the trailing suffix against official Nexperia documentation before ordering. Confirm that the specific suffix matches the required packaging format and reel specifications. Ensure the component meets the necessary automotive qualification standards if intended for such environments. Cross-reference the manufacturer's latest datasheet to confirm current production status and any potential design changes.

Selection Notes

Select this component for designs requiring low saturation voltage and high current density in a compact footprint. Consider the thermal resistance values provided for different PCB copper weights and layer configurations when calculating heat dissipation. Ensure base drive currents are sufficient to maintain low VCEsat under maximum load conditions. Verify compatibility with the target operating temperature range and switching speed requirements.

Part Context

This device belongs to the PBSS4260 series of BISS transistors. It serves as the NPN/NPN configuration within this family. Complementary variants include the PNP/PNP PBSS5260PAP and the NPN/PNP PBSS4260PANP. The series is designed to offer improved performance over standard small-signal transistors in terms of saturation voltage and current handling capabilities.

Replacement Considerations

Direct substitutes include the PBSS4260PANPSX and PBSS4260PANS. Verify pinout compatibility and thermal characteristics when replacing. Ensure the alternative package variant meets the same electrical ratings and automotive qualification standards.