PBSS4320T,215

Single Bipolar Transistors Overview

The PBSS4320T is a 20 V NPN low VCEsat transistor housed in an SOT23 surface-mounted device plastic package. It features a collector current capability of 2 A and a repetitive peak collector current of 3 A. The typical collector-emitter saturation resistance (RCEsat) is 80 mΩ under pulsed conditions with IC = 2 A and IB = 200 mA. The maximum RCEsat is 105 mΩ. The junction temperature range extends from -65 °C to 150 °C, and the total power dissipation reaches up to 1.2 W on an FR4 PCB.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage and corresponding low on-resistance for improved efficiency
• High collector current capability suitable for demanding switching loads
• AEC-Q101 qualified for automotive application reliability

Single Bipolar Transistors Applications

• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out (LDO)

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the design environment adheres to the thermal constraints defined in the datasheet, particularly regarding ambient temperature and PCB copper area. Ensure the selected component version aligns with the latest product data sheet revision to guarantee compatibility with intended manufacturing processes and quality standards.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN solution with minimal saturation voltage is required for efficient power switching. The SOT23 package offers space savings compared to larger through-hole alternatives. Consider the thermal resistance characteristics relative to the expected duty cycle and ambient conditions to ensure the junction temperature remains within safe operating limits during continuous or pulsed operation.

Single Bipolar Transistors Part Context

This device belongs to Nexperia's portfolio of low VCEsat transistors designed for high-efficiency switching. It serves as a complement to other discrete semiconductor components in power management circuits. The SOT23 form factor allows for automated surface-mount assembly, facilitating integration into dense printed circuit board layouts for consumer, industrial, and automotive electronic systems.

Single Bipolar Transistors Replacement Considerations

The PBSS5320T is documented as the PNP complement to this NPN transistor.