Single Bipolar Transistors PBSS4620PA,115 product image

PBSS4620PA,115

  • Description:TRANS NPN 20V 6A 3HUSON
  • Series:-

SKU:f8dba34c4ea0 Category: Brand:

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PBSS4620PA,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 20V 6A 3HUSON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PBSS4620PA,115

  • Description:TRANS NPN 20V 6A 3HUSON
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:275mV @ 300mA, 6A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:260 @ 2A, 2V
  • Power - Max:2.1 W
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-PowerUDFN
  • Supplier Device Package:3-HUSON (2x2)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PBSS4620PA,115

PBSS4620PA,115

Single Bipolar Transistors Overview

The PBSS4620PA,115 is an NPN low VCEsat transistor from Nexperia, housed in a DFN2020-3 (SOT1061) leadless package. It supports a collector-emitter voltage of 20 V and continuous collector current up to 6 A, with a peak pulse current of 7 A. The device features a typical saturation resistance of 33 mΩ at 6 A. Thermal performance includes a junction-to-ambient resistance of 250 K/W in free air, reducing to 60 K/W on standard FR4 PCBs. Operating temperatures range from -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient power switching
  • High collector current capability suitable for medium power applications
  • Reduced printed-circuit board area requirements compared to conventional transistors
  • Exposed heat sink providing excellent thermal and electrical conductivity

Single Bipolar Transistors Applications

  • Loadswitch circuits
  • Battery-driven devices
  • Power management systems
  • Charging circuits
  • Power switches for motors and fans

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the component version aligns with the latest product data sheet revision to ensure accurate specifications. Check for any non-automotive qualification status if automotive reliability standards are required for the target application environment.

Single Bipolar Transistors Selection Notes

Select this component when space constraints require a small surface-mount footprint alongside high current handling capabilities. The exposed drain pad design facilitates effective heat dissipation for thermal management. Ensure the base drive circuit can supply sufficient current to maintain the low saturation voltage characteristics under maximum load conditions.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Nexperia's low VCEsat series, designed for compact power switching roles. It serves as a complement to the PNP variant PBSS5620PA. The device utilizes TrenchMOS-like bipolar technology optimized for minimal conduction losses within a leadless plastic package suitable for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the PBSS5620PA. For direct pin-compatible replacements, consult Nexperia's official substitution guides or distributor cross-reference tools to identify equivalent NPN transistors with matching voltage, current, and package specifications.

PBSS4620PA,115PBSS4620PA,115

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