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Product Detailed Parameters
- Description：TRANS 2PNP 60V 770MA 6-TSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：770mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：330mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 500mA, 5V
- Power - Max：420mW
- Frequency - Transition：185MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS5160DS,115 is a PNP/PNP low VCEsat transistor pair housed in a TSOP6 (SOT457) surface-mounted package. It supports a collector-emitter voltage of -60 V and a continuous collector current of -1 A per transistor, with a peak pulse current capability of -2 A. The device features a typical collector-emitter saturation resistance of 250 mΩ at -1 A collector current and -100 mA base current. Total power dissipation reaches up to 700 mW on a ceramic PCB. The junction temperature range spans from -65 °C to +150 °C, and the transition frequency is typically 185 MHz.
Feature Summary
- Low collector-emitter saturation voltage for improved efficiency
- High collector current capability with high gain at elevated currents
- Reduced heat generation compared to conventional transistors
- Compact SOT457 package minimizing required PCB area
Applications
- Dual low power switches for motors and fans
- Automotive applications
- General purpose switching circuits
Procurement Notes
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the non-automotive qualification status aligns with the target application requirements, as automotive-grade alternatives are available through Nexperia. Ensure the component version corresponds to the latest product data sheet revision to avoid discrepancies in specifications or marking codes during assembly.
Selection Notes
Select this component when dual PNP switching is required in a compact footprint. Evaluate thermal performance based on the intended PCB material, as power dissipation varies significantly between FR4 and ceramic substrates. Consider the peak collector current rating for transient loads. Verify that the base drive current is sufficient to maintain the specified low saturation resistance under operating conditions.
Part Context
This device belongs to the PBSS series of low saturation voltage transistors manufactured by Nexperia. It serves as the PNP counterpart to the NPN/PNP PBSS4160DS. The TSOP6 package provides a small outline suitable for space-constrained designs. The product data sheet indicates a revision history dating back to 2004, with the current version reflecting non-automotive qualification status.
Replacement Considerations
The NPN complement is the PBSS4160DS. For automotive qualified versions, consult Nexperia for specific -Q part numbers. Direct pin-compatible replacements require matching the TSOP6 package and verifying electrical parameters such as VCEO and IC ratings.
