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The PBSS5160PAPS-QX is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020D-6 (SOT1118D) plastic package with visible and solderable side pads. The device supports a collector-emitter voltage of -60 V and a continuous collector current of -1 A, with a peak pulse current capability of -1.5 A. Key electrical parameters include a typical DC current gain (hFE) of 245 at -1 mA and -5 V, and a transition frequency (fT) of 125 MHz. The component is qualified to the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure that the AEC-Q101 qualification status aligns with the requirements of the target application environment before finalizing procurement decisions.
Select this component when a dual PNP transistor with low saturation voltage and high current capability is required in a compact surface-mount form factor. The DFN2020D-6 package offers enhanced thermal performance compared to smaller packages, making it suitable for power switching applications where heat dissipation is a critical design constraint.
This part belongs to the PBSS5160 series of BISS transistors from Nexperia. The series includes variants with different package options, such as the single-transistor PBSS5160U in SOT323 and the dual-transistor PBSS5160PAP in DFN2020-6. The PBSS5160PAPS variant specifically features a thermally enhanced ultra-thin package with solderable side pads.
Direct replacements within the same family include the PBSS5160PAP. Verify pinout compatibility and thermal resistance characteristics when substituting components from different manufacturers or package types.