PBSS5220V,115

Single Bipolar Transistors Overview

The PBSS5220V,115 is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia USA Inc. It is housed in a SOT666 Surface-Mounted Device plastic package with six leads. The device supports a collector-emitter voltage of -20 V and a continuous collector current of -2 A, with a peak pulse current capability of -4 A. Key electrical characteristics include a typical DC current gain (hFE) ranging from 60 to 495 depending on collector current, and a collector-emitter saturation resistance of 140 mΩ at -1 A collector current and -100 mA base current. The component operates within a junction temperature range of -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability for robust switching performance
• High collector current gain at elevated currents
• Reduced printed-circuit board area requirements compared to conventional transistors

Single Bipolar Transistors Applications

• DC-to-DC conversion circuits
• MOSFET gate driving stages
• Motor control systems
• Charging circuitry
• Low power switches for motors and fans

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packing method, as the datasheet indicates variations such as 2 mm pitch or 4 mm pitch tape and reel configurations. Confirm the manufacturer source is Nexperia or an authorized distributor to ensure authenticity. Check for any recent product status updates or revision history changes that may affect long-term availability or technical specifications before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high efficiency are critical for thermal management in compact designs. Ensure the application current does not exceed the -2 A continuous limit or -4 A peak pulse rating. Verify that the PCB footprint accommodates the SOT666 package dimensions and that the soldering process adheres to the recommended reflow soldering methods specified in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the BISS transistor family designed for small-signal applications requiring high performance in minimal space. The NPN complement for this device is the PBSS4220V. The marking code for identification on the package is 'N7'. The component is suitable for automatic optical inspection of solder joints due to its leadless medium power package design.

Single Bipolar Transistors Replacement Considerations

The official NPN complement is the PBSS4220V. No other direct substitute part numbers are documented in the provided datasheet.

Single Bipolar Transistors FAQ

What is the marking code for the PBSS5220V?

The marking code for the PBSS5220V is N7.

What is the recommended soldering method for this component?

Reflow soldering is the only recommended soldering method for the PBSS5220V.

What is the NPN complement to the PBSS5220V?

The NPN complement to the PBSS5220V is the PBSS4220V.