PBSS5260PAP-QX

PBSS5260PAP-QX

$0.17
  • Description:PBSS5260PAP-Q/SOT1118/HUSON6
  • Series:-

SKU:ed118aed2511 Category: Brand:

  
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Product Detailed Parameters

  • Description:PBSS5260PAP-Q/SOT1118/HUSON6
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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PBSS5260PAP-QX

Overview

The PBSS5260PAP-QX is a dual PNP Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a leadless DFN2020-6 (SOT1118) surface-mount package with dimensions of 2 x 2 x 0.65 mm. The device features a collector-emitter voltage (VCEO) of -60 V and a continuous collector current (IC) of -2 A per transistor, with a peak pulse current (ICM) of -3 A. Key electrical characteristics include a typical DC current gain (hFE) ranging from 50 to 75 at -2 A, and a maximum collector-emitter saturation resistance (RCEsat) of 250 mΩ under specified pulsed conditions. The component is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

  • Very low collector-emitter saturation voltage for high efficiency
  • High collector current capability with reduced PCB requirements
  • AEC-Q101 qualified for automotive reliability

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches such as motors and fans

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees for automotive-grade components. Cross-reference the part marking code '2P' with the datasheet to validate physical identification upon receipt.

Selection Notes

Select this component when a dual PNP configuration with low saturation voltage is required in a compact footprint. The DFN2020-6 package offers thermal performance suitable for medium power dissipation. Verify that the application voltage does not exceed the -60 V rating and that the base drive current can support the required collector current for optimal saturation.

Part Context

This device belongs to the PBSS5260 series of BISS transistors designed for low voltage drop applications. It serves as the PNP/PNP complement to the PBSS4260PANP and shares the same pinout and package style as other variants in the family. The technology focuses on minimizing heat generation while maintaining high current handling capabilities in small signal packages.

Replacement Considerations

Direct functional substitutes within the same package and specification range should be verified through official Nexperia cross-reference lists. Ensure any replacement maintains the -60 V rating, -2 A current capacity, and DFN2020-6 footprint compatibility.

PBSS5260PAP-QXPBSS5260PAP-QX
$0.17
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