PBSS5260PAPS-QX

PBSS5260PAPS-QX

$0.17
  • Description:PBSS5260PAPS-Q/SOT1118/HUSON6
  • Series:-

SKU:7bc515a42a24 Category: Brand:

  
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Product Detailed Parameters

  • Description:PBSS5260PAPS-Q/SOT1118/HUSON6
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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PBSS5260PAPS-QX

Overview

The PBSS5260PAPS-QX is a PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor manufactured by Nexperia. It is housed in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device plastic package with visible and solderable side pads. The device features a collector-emitter voltage of -60 V, a continuous collector current of -2 A, and a peak collector current of -3 A per transistor. Key electrical parameters include a maximum collector-emitter saturation resistance of 310 mΩ at IC = -1 A and IB = -50 mA, and a transition frequency of 100 MHz. The component is qualified according to the AEC-Q101 standard for automotive applications.

Feature Summary

  • Very low collector-emitter saturation voltage for high energy efficiency
  • High collector current capability with high gain at elevated currents
  • Exposed heat sink providing excellent thermal and electrical conductivity
  • AEC-Q101 qualified for automotive reliability

Applications

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g., motors, fans)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the requested part number matches the exact marking code '3H' and package version SOT1118D defined in the product data sheet. Confirm compliance requirements align with the AEC-Q101 qualification status before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring dual PNP transistors with low saturation voltage and high current handling in a compact form factor. The exposed heat sink design supports efficient thermal dissipation on FR4 PCBs. Consider the -60 V rating and -2 A continuous current limits to ensure operation within the specified absolute maximum ratings and recommended operating conditions for the target application environment.

Part Context

This component belongs to the Nexperia BISS (Breakthrough In Small Signal) transistor family, designed to minimize power loss through reduced saturation voltage. The PBSS5260PAPS is the PNP/PNP variant, complementing the NPN/NPN PBSS4260PANS. It utilizes advanced silicon technology to achieve high current gain and fast switching characteristics within a thermally enhanced ultra-thin leadless package suitable for automated optical inspection.

Replacement Considerations

The datasheet identifies the NPN/NPN complement as PBSS4260PANS. No other direct replacement part numbers are documented in the provided source material.

PBSS5260PAPS-QXPBSS5260PAPS-QX
$0.17
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